Hexagonal Boron Nitride (h-BN)
Hexagonal boron nitride is a semiconductor with a direct band gap of ~5.9 eV and has been used extensively as an insulator for the production of ultrahigh mobility 2D heterostructures composed of various types of 2D semiconductors (e.g. WSe2, MoSe2, etc).
The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers, down to monolayer h-BN.
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The h-BN crystals from HQ Graphene have a typical lateral size of ~0.1 cm and are transparent. The monocrystalline h-BN is an excellent insulator which is represented by its very large breakdown voltage (>0.4 V/nm). Large area size h-BN single crystals can be can be exfoliated onto a substrate (eg. SiO2, quartz, polymer, etc). Sizes range up to ~100 μm for crystals with a thickness of a few tens on nm thick. A selection of peer review publications on the hexagonal Boron Nitride we sell can be found below.
|Crystal size||~1 mm|
|Unit cell parameters||a = b = 0.2502 nm, c = 0.6617 nm, α = β = 90°, γ = 120°|
|Characterized by||XRD, Raman, EDX|
|More information?||Please contact us by email or phone|
The single crystal h-BN is characterized using:XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785nm Raman system
Raman, XRD and EDX on h-BN:
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HQ Graphene Wiki on:
h-BN (Hexagonal Boron Nitride)
1. G. Cassabois et al., "Hexagonal boron nitride is an indirect bandgap semiconductor", Nature photonics 10, 262-266 (2016), link to article:
2. S. Dufferwiel et al. "Exciton-polaritons in van der Waals heterostructures embedded in tunable microcavities", Nature Communications 6, 8579 (2015), link to article: