Bi2S3 (Bismuth Sulfide)

Bi2S3 Bismuth Sulfide Bi2S3 is a semiconductor with a bandgap of 1.3 - 1.7 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Bi2S3 belongs to the group-15 post-transition metal trichalcogenides. To buy Bi2S3 crystals please click here.

Bi2S3 crystal properties
Crystal size ~8 mm
Electrical properties Semiconductor
Crystal structure Orthorhombic
Unit cell parameters a = 0.4025, b = 1.117 nm, c = 1.135 nm, α = β = γ = 90°
Monolayer properties Link to C2DB containing calculated properties
Type Synthetic
Purity >99.995%
Characterized by XRD, Raman, EDX, Hall measurement
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The single crystal Bi2S3 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Stoichiometric analysis
Raman: 785nm Raman system

Raman, XRD and EDX on Bi2S3:

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XRD of a single crystal Bi2S3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

EDX of a single crystal Bi2S3.

Raman of a single crystal Bi2S3. Measurement with a 785nm Raman at room temperature.


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