Bi2Se3 (Bismuth Selenide)

Bi2Se3 Bismuth Selenide Bi2Se3 is a topological insulator with a band gap of ~0.3 eV for bulk crystals. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Bi2Se3 belongs to the group-15 post-transition metal trichalcogenides. To buy Bi2Se3 crystals please click here.

The Bi2Se3 crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm and have a metallic appearance.

Bi2Se3 crystal properties
Crystal size ~8 mm
Electrical properties Topological insulator
Crystal structure Rhombohedral
Unit cell parameters a = b = 0.413, c = 2.856 nm, α = β = 90°, γ = 120°
Type Synthetic
Purity >99.995%
Characterized by XRD, Raman, EDX
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The single crystal Bi2Se3 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Stoichiometric analysis
Raman: 785nm Raman system

Raman, XRD and EDX on Bi2Se3:

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X-ray diffraction on a Bi2Se3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 6 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24

XRD of a single crystal Bi2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

EDX of a single crystal Bi2Se3.

Raman of a single crystal Bi2Se3. Measurement with a 785nm Raman at room temperature.

HQ Graphene Wiki on:

Bi2Se3 (Bismuth Selenide)

1. Wang, W., et al., "Temperature dependence of nanoscale friction on topological insulator Bi2Se3 surfaces." Nanotechnology 33.39 (2022): 395706.

2. Liebig, A., et al. "Structural Characterization of Defects in the Topological Insulator Bi2Se3 at the Picometer Scale." The Journal of Physical Chemistry C (2022).

3. Kuo, Cheng-Tai, et al. "Orbital contributions in the element-resolved valence electronic structure of Bi2Se3." Physical Review B 104.24 (2021): 245105.

4. Cucini, Riccardo, et al. "Space charge free ultrafast photoelectron spectroscopy on solids by a narrowband tunable extreme ultraviolet light source." arXiv preprint arXiv:1910.05074 (2019).


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