TiS2 (1T Titanium Disulfide)

1T Titanium Disulfide TiS2 is a semimetal (has a small overlap of the conduction band and valence band) and is diamagnetic. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. 1T phase TiS2 belongs to the group-IV transition metal dichalcogenides (TMDC). To buy TiS2 crystals please click here.

The 1T TiS2 crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, hexagonal shaped and have a metallic appearance. A selection of peer review publications on the TiS2 we sell can be found below.

1T-TiS2 crystal properties
Crystal size ~10 mm
Electrical properties Semimetal, Diamagnetic
Crystal structure hexagonal
Unit cell parameters a = b = 0.340 nm, c = 0.570 nm, α = β = 90°, γ = 120°
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
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The single crystal 1T TiS2 is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on TiS2:

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X-ray diffraction on a TiS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (00l) with l = 1, 2, 3, 4

Powder X-ray diffraction (XRD) of a single crystal TiS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal TiS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal TiS2. Measurement was performed with a 785 nm Raman system at room temperature.

HQ Graphene Wiki on:

1T TiS2 (Tungsten Diselenide)

1. Dużyńska, A., et al. "Temperature‐induced phonon behavior in titanium disulfide (TiS2) nanosheets." Journal of Raman Spectroscopy 50.8 (2019): 1114-1119.

2. Chen, K., et al. "Defects controlled doping and electrical transport in TiS2 single crystals." Applied Physics Letters 116.12 (2020): 121901.

3. Wang, H., et al. "Semimetal or semiconductor: the nature of high intrinsic electrical conductivity in TiS2." The journal of physical chemistry letters 10.22 (2019): 6996-7001.


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