GaS (beta phase Gallium sulfide)
GaS (beta phase) is a semiconductor with an indirect band gap of ~2.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. α-GaS belongs to the group-13 post-transition metal monochalcogenides.
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The Gallium sulfide crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm. The crystals are yellow colored and transparent.
|Crystal size||~8 mm|
|Unit cell parameters||a = 0.360, b = 0.360 nm, c = 1.553 nm, α = β = 90°, γ = 120°|
|Monolayer properties||Link to C2DB containing calculated properties|
|Characterized by||XRD, Raman, EDX|
|More information?||Please contact us by email or phone|
The single crystal GaS is characterized using:XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system
Raman, XRD and EDX on GaS:
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HQ Graphene Wiki on:
GaS (Gallium sulfide)
1. Gutiérrez, Y., et al. "Exploring the thickness-dependence of the properties of layered gallium sulfide." Frontiers in Chemistry 9 (2021): 781467.
2. Gutiérrez, Y., et al. "Layered gallium sulfide optical properties from monolayer to CVD crystalline thin films." Optics Express 30.15 (2022): 27609-27622.
3. Zhong, W., et al. "Suspended few-layer GaS photodetector with sensitive fast response." Materials & Design 212 (2021): 110233.